Specification	FGY75T95SQDT

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	137 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	434 W
Reverse Recovery Time (trr)	259 ns
Supplier Device Package	TO-247-3
Switching Energy	8.8 mJ, 3.2 mJ
Test Condition	15 V, 4.7 Ohm, 600 V, 75 A
Vce(on) (Max) @ Vge, Ic	2.11 V
Voltage - Collector Emitter Breakdown (Max) [Max]	950 V

FGY75T120SQDN Series

IGBT - 950 V 75 A Field stop trench IGBT

Part	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Reverse Recovery Time (trr)	Power - Max [Max]	Package / Case	Current - Collector Pulsed (Icm)	IGBT Type	Gate Charge	Test Condition	Td (on/off) @ 25°C
ON Semiconductor FGY75T120SQDN	TO-247-3	Through Hole	-55 °C	175 ░C	150 A	1200 V	1.95 V	1.96 mJ 6.25 mJ	99 ns	790 W	TO-247-3 Variant	300 A	Field Stop	399 nC
ON Semiconductor FGY75T95SQDT	TO-247-3	Through Hole	-55 °C	175 ░C	150 A	950 V	2.11 V	3.2 mJ 8.8 mJ	259 ns	434 W	TO-247-3	300 A	Trench Field Stop	137 nC	4.7 Ohm 15 V 75 A 600 V
ON Semiconductor FGY75T95LQDT	TO-247-3	Through Hole	-55 °C	175 ░C	150 A	950 V	1.69 V	1.8 mJ 2 mJ	259 ns	453 W	TO-247-3	225 A	Trench Field Stop	663.3 nC	4.7 Ohm 15 V 37.5 A 600 V	52 ns 496 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGY75T120SQDN Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited forUPS and solar applications. Incorporated into the device is a soft andfast co−packaged free wheeling diode with a low forward voltage.