Specification	NTD32N06LT4G

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.5 W, 93.75 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTD32N06L Series

Power MOSFET 60V 32A 28 mOhm Single N-Channel DPAK Logic Level

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor NTD32N06LT4G	32 A	1.5 W 93.75 W	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1700 pF	2 V	28 mOhm	Surface Mount	50 nC	60 V	5 V	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	175 ░C
ON Semiconductor NTD32N06G	32 A	1.5 W 93.75 W	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1725 pF	4 V		Surface Mount	60 nC	60 V	10 V	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	175 ░C	26 mOhm
ON Semiconductor NTD32N06T4G	32 A	1.5 W 93.75 W	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1725 pF	4 V		Surface Mount	60 nC	60 V	10 V	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	175 ░C	26 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.