Specification	EMZ1DXV6T1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	180 MHz, 140 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	400 mV, 500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

EMZ1 Series

NPN PNP Bipolar Transistor

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Transistor Type
ON Semiconductor EMZ1DXV6T1	500 mW	120	SOT-563 SOT-666	SOT-563	-55 °C	150 °C	500 nA	60 V	100 mA	400 mV 500 mV	140 MHz 180 MHz	Surface Mount	1 NPN 1 PNP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	8000	$ 0.08
		12000	$ 0.07
		28000	$ 0.07
		100000	$ 0.06

Description

General part information

EMZ1 Series

The NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing