
Discrete Semiconductor Products
SQD25N06-22L_GE3
ActiveVishay General Semiconductor - Diodes Division
POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 60V, 0.022OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Discrete Semiconductor Products
SQD25N06-22L_GE3
ActiveVishay General Semiconductor - Diodes Division
POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 60V, 0.022OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | SQD25N06-22L_GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 50 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1975 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 62 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.10 | |
| 10 | $ 1.43 | |||
| 100 | $ 0.97 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.75 | |||
| Digi-Reel® | 1 | $ 2.10 | ||
| 10 | $ 1.43 | |||
| 100 | $ 0.97 | |||
| 500 | $ 0.78 | |||
| 1000 | $ 0.75 | |||
| Tape & Reel (TR) | 2000 | $ 0.66 | ||
| 4000 | $ 0.62 | |||
| 6000 | $ 0.61 | |||
Description
General part information
SQD25 Series
N-Channel 60 V 25A (Tc) 62W (Tc) Surface Mount TO-252AA
Documents
Technical documentation and resources