Specification	FDMS36101L-F085

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3945 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	94 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS36101L_F085 Series

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Part	Power - Max [Max]	Technology	Configuration	FET Feature	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade
ON Semiconductor FDMS3686S	1 W	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	Power56	8 mOhm	1785 pF	29 nC	Surface Mount	8-PowerTDFN	13 A 23 A	-55 °C	150 °C	30 V	2.7 V
ON Semiconductor FDMS3672		MOSFET (Metal Oxide)			8-MLP (5x6) Power56		2680 pF		Surface Mount	8-PowerWDFN	7.4 A 22 A	-55 °C	150 °C	100 V	4 V	44 nC	2.5 W 78 W	6 V 10 V	20 V	23 mOhm	N-Channel
ON Semiconductor FDMS36101L-F085		MOSFET (Metal Oxide)			Power56	26 mOhm			Surface Mount	8-PowerVDFN	38 A	-55 °C	175 ░C	100 V	3 V	84 nC	94 W	4.5 V 10 V	20 V		N-Channel	AEC-Q101	3945 pF	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS36101L_F085 Series

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.