Discrete Semiconductor Products

SI8810-TP

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POWER FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	SI8810-TP

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	300 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	FET Type	Mounting Type	Vgs(th) (Max) @ Id
Micro Commercial Components SI8810-TP	300 mW	7 A	890 pF	20 mOhm	SOT-23	20 V	1.8 V 10 V	MOSFET (Metal Oxide)	-55 °C	150 °C	12 V	SC-59 SOT-23-3 TO-236-3	N-Channel	Surface Mount	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.08

General part information

N-Channel 20 V 7A 300mW Surface Mount SOT-23

Technical documentation and resources