Discrete Semiconductor Products

PSMNR70-30YLHX

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MOSFET N-CH 30V 300A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 300A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMNR70-30YLHX

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	4852 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	268 W
Rds On (Max) @ Id, Vgs	0.82 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type
Freescale Semiconductor - NXP PSMNR70-30YLHX	4.5 V 10 V	30 V	157 nC	2.2 V	SC-100 SOT-669	20 V	0.82 mOhm	Surface Mount	-55 °C	175 ░C	4852 pF	268 W	LFPAK56 Power-SO8	300 A	MOSFET (Metal Oxide)	N-Channel

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General part information

N-Channel 30 V 300A (Tc) 268W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources