PSMN075-100MSEX

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PSMN075-100MSE - N-CHANNEL 100 V 71 MΩ STANDARD LEVEL MOSFET IN LFPAK33 DESIGNED SPECIFICALLY FOR POE APPLICATIONS@EN-US

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Discrete Semiconductor Products

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PSMN075-100MSE - N-CHANNEL 100 V 71 MΩ STANDARD LEVEL MOSFET IN LFPAK33 DESIGNED SPECIFICALLY FOR POE APPLICATIONS@EN-US

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN075-100MSEX

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.4 nC
Input Capacitance (Ciss) (Max) @ Vds	773 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	71 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type
Freescale Semiconductor - NXP PSMN075-100MSEX	LFPAK33	71 mOhm	-55 °C	175 ░C	20 V	18 A	16.4 nC	773 pF	MOSFET (Metal Oxide)	65 W	10 V	100 V	Surface Mount	N-Channel

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General part information

N-Channel 100 V 18A (Tj) 65W (Tc) Surface Mount LFPAK33

Technical documentation and resources