Specification	PHPT60410NYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	230
Frequency - Transition	128 MHz
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max	1.3 W
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	460 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PHPT60410NY Series

40 V, 10 A NPN high power bipolar transistor

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type
Freescale Semiconductor - NXP PHPT60410NYX	LFPAK56 Power-SO8	100 nA	128 MHz	1.3 W	230	40 V	Surface Mount	175 °C	SC-100 SOT-669	460 mV	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources