Discrete Semiconductor Products

2SB1201T-E

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TRANS PNP 50V 2A TP

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Discrete Semiconductor Products

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TRANS PNP 50V 2A TP

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1201T-E

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	800 mW
Supplier Device Package	TP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Part	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]
ON Semiconductor 2SB1201T-E	TP	800 mW	200	150 MHz	100 nA	IPAK TO-251-3 Short Leads TO-251AA	150 °C	Through Hole	50 V	PNP	700 mV	2 A
ON Semiconductor 2SB1201T-TL-E	TP-FA	800 mW	200	150 MHz	100 nA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	Surface Mount	50 V	PNP	700 mV	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

2SB1201 is a Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Application.

Technical documentation and resources

No documents available