Discrete Semiconductor Products

VS-FB180SA10P

Obsolete

MOSFET N-CH 100V 180A SOT-227

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 180A SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-FB180SA10P

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	380 nC
Input Capacitance (Ciss) (Max) @ Vds	10700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division VS-FB180SA10P	SOT-227-4 miniBLOC	Chassis Mount	20 V	4 V	10 V	10700 pF	-55 °C	150 °C	480 W	SOT-227	100 V	6.5 mOhm	N-Channel	180 A	MOSFET (Metal Oxide)	380 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 180A (Tc) 480W (Tc) Chassis Mount SOT-227

Technical documentation and resources