Discrete Semiconductor Products

FDS2070N7

Obsolete

MOSFET N-CH 150V 4.1A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 4.1A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	FDS2070N7

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1884 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Technology	Package / Case	Package / Case
ON Semiconductor FDS2070N7	-55 °C	150 °C	3 W	4.1 A	150 V	53 nC	8-SO	20 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	4 V	1884 pF	6 V 10 V	78 mOhm	N-Channel	MOSFET (Metal Oxide)
ON Semiconductor FDS2070N7	-55 °C	150 °C	3 W	4.1 A	150 V	53 nC	8-SO FLMP	20 V	8-SOIC			Surface Mount	4 V	1884 pF	6 V 10 V	78 mOhm	N-Channel	MOSFET (Metal Oxide)	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 4.1A (Ta) 3W (Ta) Surface Mount 8-SO FLMP

Technical documentation and resources