Discrete Semiconductor Products

BY228-13TR

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DIODE AVALANCHE 1KV 3A SOD64

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Discrete Semiconductor Products

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DIODE AVALANCHE 1KV 3A SOD64

Technical Specifications

Parameters and characteristics for this part

Specification	BY228-13TR

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction	140 °C
Package / Case	SOD-64, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-64
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction	Speed	Speed	Technology	Current - Reverse Leakage @ Vr	Package / Case
Vishay General Semiconductor - Diodes Division BY228-15TAP	1.2 kV	Through Hole	SOD-64	2 µs	1.5 V	3 A	140 °C	Standard Recovery >500ns	200 mA	Avalanche	5 µA	Axial SOD-64
Vishay General Semiconductor - Diodes Division BY228-13TR	1000 V	Through Hole	SOD-64	2 µs	1.5 V	3 A	140 °C	Standard Recovery >500ns	200 mA	Avalanche	5 µA	Axial SOD-64
Vishay General Semiconductor - Diodes Division BY228TR	1500 V	Through Hole	SOD-64	20 µs	1.5 V	3 A	140 °C	Standard Recovery >500ns	200 mA	Avalanche	5 µA	Axial SOD-64

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 3A Through Hole SOD-64

Technical documentation and resources