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TO-263
Discrete Semiconductor Products

FQB47P06TM-AM002

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 47 A, 0.026 OHM, TO-263 (D2PAK), SURFACE MOUNT

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TO-263
Discrete Semiconductor Products

FQB47P06TM-AM002

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 47 A, 0.026 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB47P06TM-AM002
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.75 W, 160 W
Rds On (Max) @ Id, Vgs26 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.56
10$ 2.99
100$ 2.42
Digi-Reel® 1$ 3.56
10$ 2.99
100$ 2.42
Tape & Reel (TR) 800$ 2.15
1600$ 1.84
2400$ 1.73
5600$ 1.66
NewarkEach (Supplied on Cut Tape) 1$ 4.78
10$ 3.74
25$ 3.71
50$ 3.38
ON SemiconductorN/A 1$ 1.53

Description

General part information

FQB47P06 Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.