Specification	NTMFS5H663NLT1G

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1131 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs [Max]	7.2 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTMFS5H663NL Series

Power MOSFET 60 V, 7.2 mΩ, 61 A, Single N−Channel

Part	Mounting Type	Vgs (Max)	Technology	Supplier Device Package	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMFS5H663NLT1G	Surface Mount	20 V	MOSFET (Metal Oxide)	5-DFN (5x6)	8-SOFL	N-Channel	17 nC	1131 pF	4.5 V 10 V	7.2 mOhm	2 V	8-PowerTDFN 5 Leads	-55 °C	150 °C	60 V	3 W	15 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET 60 V, 7.2 mΩ, 61 A, Single N−Channel

Technical documentation and resources