Discrete Semiconductor Products

FDT55AN06LA0

Obsolete

MOSFET N-CH 60V 12.1A SOT223-4

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 12.1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	FDT55AN06LA0

Current - Continuous Drain (Id) @ 25°C	12.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	1130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	8.9 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor FDT55AN06LA0	TO-261-4 TO-261AA	Surface Mount	20 V	3 V	10 nC	10 V	5 V	60 V	12.1 A	SOT-223-4	46 mOhm	8.9 W	N-Channel	-55 °C	150 °C	1130 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4

Technical documentation and resources