Discrete Semiconductor Products

KST5550MTF

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KST5550MTF

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

NPN Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Package / Case	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Power - Max [Max]
ON Semiconductor KST5550MTF	100 nA	250 mV	600 mA	Surface Mount	140 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	300 MHz	60 hFE	NPN	350 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$