Specification	MCH6662-TL-W

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	128 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	800 mW
Supplier Device Package	SC-88FL/MCPH6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

MCH6662 Series

Part	Technology	Drain to Source Voltage (Vdss)	Configuration	Mounting Type	FET Feature	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	Vgs(th) (Max) @ Id
ON Semiconductor MCH6662-TL-H	MOSFET (Metal Oxide)	20 V	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	150 °C	2 A	6-SMD Flat Leads	6-MCPH	128 pF	1.8 nC	800 mW
ON Semiconductor MCH6662-TL-W	MOSFET (Metal Oxide)	20 V	2 N-Channel (Dual)	Surface Mount	Logic Level Gate	150 °C	2 A	6-TSSOP SC-88 SOT-363	SC-88FL/MCPH6	128 pF	1.8 nC	800 mW	1.8 V	1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MCH6662 is a Power MOSFET, 20V, 160mΩ, 2A, Dual N-Channel for General-Purpose Switching Device Applications.