Discrete Semiconductor Products

KSH47TF

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSH47TF

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	10 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.56 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	250 V

NPN Epitaxial Silicon Transistor

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSH47TF	1 A	10 MHz	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 V	NPN	DPAK	1.56 W	200 µA	250 V	150 °C	30

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$