Discrete Semiconductor Products

PMV45EN2R

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MOSFET N-CH 30V 4.1A TO236AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 4.1A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV45EN2R

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	209 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	5 W
Power Dissipation (Max)	510 mW
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Power Dissipation (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology
Freescale Semiconductor - NXP PMV45EN2R	20 V	5 W	510 mW	4.1 A	SC-59 SOT-23-3 TO-236-3	TO-236AB	4.5 V 10 V	N-Channel	30 V	-55 °C	150 °C	2 V	209 pF	Surface Mount	6.3 nC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB

Technical documentation and resources