Discrete Semiconductor Products

VS-40HFR80

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DIODE GEN PURP 800V 40A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40HFR80

Current - Average Rectified (Io)	40 A
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Speed	Speed	Package / Case	Supplier Device Package	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-40HFR80	800 V	40 A	Chassis Stud Mount	Standard Recovery >500ns	200 mA	DO-203AB DO-5 Stud	DO-5	DO-203AB	Reverse Polarity Standard	1.3 V	190 °C	-65 C
Vishay General Semiconductor - Diodes Division VS-40HFR80M	800 V	40 A	Chassis Stud Mount	Standard Recovery >500ns	200 mA	DO-203AB DO-5 Stud	DO-5	DO-203AB	Reverse Polarity Standard	1.3 V	190 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 40A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources