Discrete Semiconductor Products

TSN525M60HS3G

Obsolete

DIODE SCHOTTKY 60V 25A 8DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SCHOTTKY 60V 25A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSN525M60HS3G

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	8-PowerTDFN
Speed	200 mA, 500 ns
Supplier Device Package	8-PDFN (5x6)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	630 mV

Part	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology
Taiwan Semiconductor Corporation TSN525M60HS3G	8-PowerTDFN	500 µA	150 °C	-55 °C	Surface Mount	8-PDFN (5x6)	200 mA 500 ns	630 mV	60 V	25 A	Schottky
Taiwan Semiconductor Corporation TSN525M60 S3G	8-PowerLDFN	500 µA	150 °C	-55 °C	Surface Mount	8-PDFN (5x6)	200 mA 500 ns	630 mV	60 V	25 A	Schottky
Taiwan Semiconductor Corporation TSN525M60	8-PowerLDFN	500 µA	150 °C	-55 °C	Surface Mount	8-PDFN (5x6)	200 mA 500 ns	630 mV	60 V	25 A	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 60 V 25A Surface Mount 8-PDFN (5x6)

Technical documentation and resources

No documents available