Discrete Semiconductor Products

EMZ7-TP

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DUAL N+P TRANSISTORS,SOT-563

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Discrete Semiconductor Products

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DUAL N+P TRANSISTORS,SOT-563

Technical Specifications

Parameters and characteristics for this part

Specification	EMZ7-TP

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	280 MHz, 420 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	200 mW
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	220 mV
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Micro Commercial Components EMZ7-TP	200	1 NPN 1 PNP	220 mV	100 nA	12 V	SOT-563	280 MHz 420 MHz	100 mA	Surface Mount	200 mW	-55 °C	150 °C	SOT-563 SOT-666

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General part information

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 12V 100mA 420MHz, 280MHz 200mW Surface Mount SOT-563

Technical documentation and resources