Discrete Semiconductor Products

BUK9Y40-55B,115

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MOSFET N-CH 55V 26A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 55V 26A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y40-55B,115

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1020 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	59 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Qualification	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP BUK9Y40-55B,115	1020 pF	59 W	-55 °C	175 ░C	Automotive	Surface Mount	N-Channel	11 nC	36 mOhm	SC-100 SOT-669	2 V	55 V	MOSFET (Metal Oxide)	26 A	AEC-Q101	LFPAK56 Power-SO8	15 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 26A (Tc) 59W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources