Discrete Semiconductor Products

VS-GB200TH120N

Obsolete

IGBT MOD 1200V 360A INT-A-PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 360A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB200TH120N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	360 A
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	14.9 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Double INT-A-PAK (3 + 4)
Power - Max [Max]	1136 W
Supplier Device Package	Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Package / Case	Operating Temperature	Mounting Type	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Configuration	NTC Thermistor	Input Capacitance (Cies) @ Vce
Vishay General Semiconductor - Diodes Division VS-GB200TH120N	Double INT-A-PAK (3 + 4)	150 °C	Chassis Mount	Double INT-A-PAK	2.35 V	1200 V	Standard	5 mA	1136 W	360 A	Half Bridge		14.9 nF
Vishay General Semiconductor - Diodes Division VS-GB200TH120U	Double INT-A-PAK (3 + 4)	150 °C	Chassis Mount	Double INT-A-PAK	3.6 V	1200 V	Standard	5 mA	1316 W	330 A	Half Bridge		16.9 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 360 A 1136 W Chassis Mount Double INT-A-PAK

Technical documentation and resources

No documents available