Discrete Semiconductor Products

MTB50P03HDLG

Obsolete

MOSFET P-CH 30V 50A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 50A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MTB50P03HDLG

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC
Input Capacitance (Ciss) (Max) @ Vds	4900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	2.5 W, 125 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor MTB50P03HDLG	2 V	4900 pF	2.5 W 125 W	D2PAK	50 A	25 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	P-Channel	Surface Mount	30 V	5 V	-55 °C	150 °C	MOSFET (Metal Oxide)	100 nC	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK

Technical documentation and resources