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Discrete Semiconductor Products

MUN5213T1

Obsolete
ON Semiconductor

TRANS BRT NPN 100MA 50V SOT-323

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DocumentsDatasheet
Discrete Semiconductor Products

MUN5213T1

Obsolete
ON Semiconductor

TRANS BRT NPN 100MA 50V SOT-323

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN5213T1
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Power - Max [Max]202 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 6662$ 0.05

Description

General part information

MUN5213DW1 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources