Discrete Semiconductor Products

PJC7401_R1_00001

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SOT-323, MOSFET

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Discrete Semiconductor Products

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SOT-323, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7401_R1_00001

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	443 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Panjit International Inc. PJC7401_R1_00001	12 V	30 V	350 mW	1.3 V	10 V	2.5 V	MOSFET (Metal Oxide)	1.5 A	SC-70 SOT-323	SOT-323	-55 °C	150 °C	11 nC	P-Channel	Surface Mount	443 pF

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General part information

P-Channel 30 V 1.5A (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources