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BA17818FP-E2

Discrete Semiconductor Products

RD3G07BATTL1

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Rohm Semiconductor

POWER MOSFET, P CHANNEL, 40 V, 70 A, 0.0057 OHM, TO-252 (DPAK), SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsWhat Is Thermal Design List of Transistor Package Thermal Resistance +38

BA17818FP-E2

Discrete Semiconductor Products

RD3G07BATTL1

Active

Rohm Semiconductor

POWER MOSFET, P CHANNEL, 40 V, 70 A, 0.0057 OHM, TO-252 (DPAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsWhat Is Thermal Design List of Transistor Package Thermal Resistance +38

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3G07BATTL1

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	5550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	7.1 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.11
		10	$ 2.02
		100	$ 1.40
		500	$ 1.13
		1000	$ 1.05
	Digi-Reel®	1	$ 3.11
		10	$ 2.02
		100	$ 1.40
		500	$ 1.13
		1000	$ 1.05
	N/A	4344	$ 2.82
	Tape & Reel (TR)	2500	$ 0.96
Newark	Each (Supplied on Full Reel)	2500	$ 0.99

Description

General part information

RD3G07BAT Series

RD3G07BAT is a low on-resistance power MOSFET suitable for switching applications.

Documents

Technical documentation and resources

What Is Thermal Design

List of Transistor Package Thermal Resistance

Notes for Calculating Power Consumption:Static Operation

Moisture Sensitivity Level - Transistors

Package Information

Part Explanation

Application Note

P-channel Power MOSFETs selection guide

Technical Article

About Flammability of Materials

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

How to Create Symbols for PSpice Models

Condition of Soldering / Land Pattern Reference

Package Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Explanation for Marking

Package Information

About Export Regulations

Export Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Types and Features of Transistors

Application Note

RD3G07BAT ESD Data

Characteristics Data

Notes for Temperature Measurement Using Thermocouples

Report of SVHC under REACH Regulation

Environmental Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Reliability Test Result

Manufacturing Data

Anti-Whisker formation - Transistors

Package Information

RD3G07BAT Data Sheet

Basics of Thermal Resistance and Heat Dissipation

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Precautions When Measuring the Rear of the Package with a Thermocouple

Compliance of the RoHS directive

Environmental Data

PCB Layout Thermal Design Guide

What is a Thermal Model? (Transistor)

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

How to Use LTspice® Models

Schematic Design & Verification

TO-252_TL1 Taping Information

Package Information

Package Dimensions

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

RD3G07BAT Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Technology
Rohm Semiconductor RD3G07BATTL1	5550 pF	150 °C	4.5 V 10 V	Surface Mount	70 A	101 W	20 V	2.5 V	105 nC	40 V	TO-252	DPAK (2 Leads + Tab) SC-63 TO-252-3	7.1 mOhm	P-Channel	MOSFET (Metal Oxide)