Discrete Semiconductor Products
RW4E065GNTCL1
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 6.5A, DFN1616 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RW4E065GNTCL1
ActiveRohm Semiconductor
MOSFET, N-CH, 30V, 6.5A, DFN1616 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RW4E065GNTCL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 260 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-PowerUFDFN |
| Power Dissipation (Max) [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 22.5 mOhm |
| Supplier Device Package | DFN1616-7T |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RW4E065 Series
RW4E065GN is a power MOSFET with low on - resistance, suitable for switching.
Documents
Technical documentation and resources