Discrete Semiconductor Products

SIHP085N60EF-GE3

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EF SERIES POWER MOSFET WITH FAST

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Discrete Semiconductor Products

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EF SERIES POWER MOSFET WITH FAST

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP085N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2733 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	84 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHP085N60EF-GE3	Through Hole	MOSFET (Metal Oxide)	TO-220-3	34 A	-55 °C	150 °C	5 V	10 V	84 mOhm	600 V	N-Channel	63 nC	TO-220AB	30 V	2733 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 34A (Tc) 184W (Tc) Through Hole TO-220AB

Technical documentation and resources