VS-GT200TP065N

Obsolete

IGBT MOD 650V 221A INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 650V 221A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GT200TP065N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	221 A
Current - Collector Cutoff (Max) [Max]	60 µA
IGBT Type	Trench
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	INT-A-Pak
Power - Max [Max]	600 W
Supplier Device Package	INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.12 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	NTC Thermistor	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Configuration	Mounting Type	Package / Case	IGBT Type	Vce(on) (Max) @ Vge, Ic	Input	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division VS-GT200TP065N		221 A	600 W	650 V	60 µA	Half Bridge	Chassis Mount	INT-A-Pak	Trench	2.12 V	Standard	-40 C	175 °C	INT-A-PAK
Vishay General Semiconductor - Diodes Division VS-GT200TP065U		177 A	429 W	650 V	200 µA	Half Bridge	Chassis Mount	Module	Trench Field Stop	2.12 V	Standard	-40 C	175 °C	INT-A-PAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Half Bridge 650 V 221 A 600 W Chassis Mount INT-A-PAK

Technical documentation and resources

No documents available