Discrete Semiconductor Products

FDSS2407S_B82086

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ON Semiconductor

MOSFET 2N-CH 62V 3.3A 8SOIC

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Discrete Semiconductor Products

FDSS2407S_B82086

Active

ON Semiconductor

MOSFET 2N-CH 62V 3.3A 8SOIC

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDSS2407S_B82086

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.3 A
Drain to Source Voltage (Vdss)	62 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.27 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDSS2407 Series

N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Configuration	Supplier Device Package	Technology
ON Semiconductor FDSS2407	-55 °C	150 °C	3.3 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	3 V	62 V	110 mOhm	Automotive	4.3 nC	AEC-Q101	2.27 W	300 pF	Logic Level Gate	2 N-Channel (Dual)	8-SOIC	MOSFET (Metal Oxide)
ON Semiconductor FDSS2407S_B82086	-55 °C	150 °C	3.3 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	3 V	62 V	110 mOhm		4.3 nC		2.27 W	300 pF	Logic Level Gate	2 N-Channel (Dual)	8-SOIC	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	398	$ 0.75

Description

General part information

FDSS2407 Series

This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are:1. A drain to source voltage feedback signal and2. A gate drive disable control function that previously required external discrete circuitry.Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired "OR’d" together to a single input of the monitoring circuit.The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired "OR’d" allowing multiple devices to be controlled by a single open collector / drain control transistor.

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Technical documentation and resources

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