Specification	NTLUS4195PZTAG

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUFDFN
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	6-UDFN (1.6x1.6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

NTLUS4195PZ Series

Small Signal MOSFET 30V 3A 95 mOhm Single P-Channel UDFN6 with ESD

Part	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs
ON Semiconductor NTLUS4195PZTAG	3 V	MOSFET (Metal Oxide)	5 nC	4.5 V 10 V	30 V	-55 °C	150 °C	2 A	20 V	Surface Mount	6-UDFN (1.6x1.6)	P-Channel	250 pF	600 mW	6-PowerUFDFN	90 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET, -30 V, -4 A, µCool™ Single P-Channel, ESD, 1.6 x 1.6 x 0.55 mm UDFN Package