Discrete Semiconductor Products

FDU2572

Obsolete

MOSFET N-CH 150V 4A/29A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 4A/29A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDU2572

Current - Continuous Drain (Id) @ 25°C	29 A, 4 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	135 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type
ON Semiconductor FDU2572	IPAK	4 V	-55 °C	175 ░C	135 W	150 V	1770 pF	4 A 29 A	MOSFET (Metal Oxide)	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	54 mOhm	20 V	6 V 10 V	34 nC	N-Channel
ON Semiconductor FDU2572	IPAK	4 V	-55 °C	175 ░C	135 W	150 V	1770 pF	4 A 29 A	MOSFET (Metal Oxide)	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	54 mOhm	20 V	6 V 10 V	34 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 4A (Ta), 29A (Tc) 135W (Tc) Through Hole IPAK

Technical documentation and resources