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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-ETU3006STRR-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO263AB

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MBRB15H50CT-E3/81
Discrete Semiconductor Products

VS-ETU3006STRR-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-ETU3006STRR-M3
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr30 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)45 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-263AB (D2PAK)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.82
10$ 1.51
100$ 1.20
Digi-Reel® 1$ 1.82
10$ 1.51
100$ 1.20
Tape & Reel (TR) 800$ 1.02
1600$ 0.86
2400$ 0.82
5600$ 0.79

Description

General part information

ETU3006 Series

Diode 600 V 30A Surface Mount TO-263AB (D2PAK)

Documents

Technical documentation and resources