VS-GB400TH120N

Obsolete

IGBT MOD 1200V 800A INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 800A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB400TH120N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	800 A
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	32.7 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Double INT-A-PAK (3 + 4)
Power - Max [Max]	2604 W
Supplier Device Package	Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Configuration	Input Capacitance (Cies) @ Vce	Input	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	NTC Thermistor	Mounting Type	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-GB400TH120N	2604 W	1.9 V	Half Bridge	32.7 nF	Standard	150 °C	-40 °C	1200 V		Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK	5 mA	800 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 800 A 2604 W Chassis Mount Double INT-A-PAK

Technical documentation and resources

No documents available