Specification	FGPF10N60UNDF

Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	37 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	42 W
Reverse Recovery Time (trr)	37.7 ns
Supplier Device Package	TO-220F-3
Switching Energy	150 µJ, 50 µJ
Td (on/off) @ 25°C	52.2 ns, 8 ns
Test Condition	400 V, 10 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

FGPF10N60UNDF Series

IGBT, 600V, 10A, Short Circuit Rated

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Td (on/off) @ 25°C	Switching Energy	Current - Collector Pulsed (Icm)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Reverse Recovery Time (trr)	IGBT Type	Supplier Device Package	Current - Collector (Ic) (Max)
ON Semiconductor FGPF10N60UNDF	600 V	10 A 10 Ohm 15 V 400 V	8 ns 52.2 ns	50 µJ 150 µJ	30 A	42 W	2.45 V	37 nC	-55 °C	150 °C	Through Hole	TO-220-3 Full Pack	37.7 ns	NPT	TO-220F-3	20 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGPF10N60UNDF Series

Using advanced NPT IGBT technology, ON Semiconductor’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.