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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MUN2214T3G

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ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, SINGLE NPN, 50 V, 100 MA

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ONSEMI MUN2134T1G
Discrete Semiconductor Products

MUN2214T3G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, SINGLE NPN, 50 V, 100 MA

Technical Specifications

Parameters and characteristics for this part

SpecificationMUN2214T3G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]230 mW
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47000 Ohms
Resistors IncludedR1 and R2
Supplier Device PackageSC-59
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.19
Digi-Reel® 1$ 0.19
Tape & Reel (TR) 10000$ 0.03
20000$ 0.03
30000$ 0.03
50000$ 0.02
70000$ 0.02
100000$ 0.02
250000$ 0.02
500000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MUN2214 Series

NPN Bipolar Digital Transistor (BRT)