Specification	PBSS5580PA,115

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	420 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

PBSS5580 Series

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Operating Temperature
Freescale Semiconductor - NXP PBSS5580PA,115	Surface Mount	4 A	140	3-PowerUDFN	110 MHz	80 V	PNP	100 nA	2.1 W	420 mV	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 4 A 110MHz 2.1 W Surface Mount 3-HUSON (2x2)

Technical documentation and resources