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SOT1061
Discrete Semiconductor Products

PBSS5580PA,115

Active
Nexperia USA Inc.

80 V, 4 A PNP LOW VCESAT (BISS) TRANSISTOR

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SOT1061
Discrete Semiconductor Products

PBSS5580PA,115

Active
Nexperia USA Inc.

80 V, 4 A PNP LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5580PA,115
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]140
Frequency - Transition110 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-PowerUDFN
Power - Max [Max]2.1 W
Supplier Device Package3-HUSON
Supplier Device Package [x]2
Supplier Device Package [y]2
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic420 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.40
100$ 0.24
500$ 0.22
1000$ 0.15
Digi-Reel® 1$ 0.51
10$ 0.40
100$ 0.24
500$ 0.22
1000$ 0.15
N/A 5156$ 0.83
Tape & Reel (TR) 3000$ 0.14
6000$ 0.13
9000$ 0.12
30000$ 0.12
75000$ 0.11

Description

General part information

PBSS5580 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.