Isolators

HMHA2801R4V

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

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Isolators

HMHA2801R4V

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HMHA2801R4V

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	80 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-SOIC
Package / Case [x]	0.173 in
Package / Case [y]	4.4 mm
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	3 µs
Supplier Device Package	4-Mini-Flat
Vce Saturation (Max) [Max]	300 mV
Voltage - Forward (Vf) (Typ)	1.3 V
Voltage - Isolation	3750 Vrms

HMHA2801A Series

4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers <sub>(Not recommend for new design. The new equivalent part number is FODM217x)</sub>

Part	Voltage - Isolation	Current Transfer Ratio (Max) [Max]	Package / Case [y]	Package / Case	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Number of Channels	Voltage - Forward (Vf) (Typ)	Vce Saturation (Max) [Max]	Input Type	Mounting Type	Supplier Device Package	Current - Output / Channel	Current - DC Forward (If) (Max)	Output Type	Current Transfer Ratio (Max)
ON Semiconductor HMHA281R3V	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	50 %	100 °C	-55 °C	1	1.3 V	400 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA2801A	3750 Vrms	160 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	80 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA281R2_F132	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	50 %	100 °C	-55 °C	1	1.3 V	400 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA2801AV	3750 Vrms	160 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	80 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA2801R4V	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	80 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA281V	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	50 %	100 °C	-55 °C	1	1.3 V	400 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA281R4V	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	50 %	100 °C	-55 °C	1	1.3 V	400 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA2801B	3750 Vrms		4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	130 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm	260 %
ON Semiconductor HMHA2801V	3750 Vrms	600 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	80 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm
ON Semiconductor HMHA2801AR2V	3750 Vrms	160 %	4.4 mm	4-SOIC	0.173 in	3 µs	3 µs	80 %	100 °C	-55 °C	1	1.3 V	300 mV	DC	Surface Mount	4-Mini-Flat	50 mA	50 mA	1.81 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HMHA2801A Series

The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm.

Documents

Technical documentation and resources