Discrete Semiconductor Products

S2B-E3/52T

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STANDARD RECOVERY DIODE, 100 V, 1.5 A, SINGLE, 1.15 V, 2 µS, 50 A

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Discrete Semiconductor Products

Active

STANDARD RECOVERY DIODE, 100 V, 1.5 A, SINGLE, 1.15 V, 2 µS, 50 A

Technical Specifications

Parameters and characteristics for this part

Specification	S2B-E3/52T

Capacitance @ Vr, F	16 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed
Vishay General Semiconductor - Diodes Division S2B-E3/5BT	1.15 V	SMB	DO-214AA	16 pF	1 µA	100 V	Surface Mount	1.5 A	2 µs	DO-214AA SMB	Standard	150 °C	-55 °C	Standard Recovery >500ns	200 mA
Vishay General Semiconductor - Diodes Division S2B-E3/52T	1.15 V	SMB	DO-214AA	16 pF	1 µA	100 V	Surface Mount	1.5 A	2 µs	DO-214AA SMB	Standard	150 °C	-55 °C	Standard Recovery >500ns	200 mA

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General part information

Diode 100 V 1.5A Surface Mount DO-214AA (SMB)

Technical documentation and resources