Discrete Semiconductor Products

FGA40N60UFDTU

Obsolete

IGBT, 40A, 600V, N-CHANNEL

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Discrete Semiconductor Products

Obsolete

IGBT, 40A, 600V, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	FGA40N60UFDTU

Current - Collector (Ic) (Max) [Max]	40 A
Gate Charge	77 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	160 W
Reverse Recovery Time (trr)	95 ns
Supplier Device Package	TO-3P
Switching Energy	130 µJ, 470 µJ
Td (on/off) @ 25°C	65 ns, 15 ns
Test Condition	20 A, 300 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Power - Max [Max]	Td (on/off) @ 25°C	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Mounting Type	Vce(on) (Max) @ Vge, Ic	Gate Charge	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FGA40N60UFDTU	160 W	15 ns 65 ns	SC-65-3 TO-3P-3	TO-3P	600 V	130 µJ 470 µJ	Through Hole	3 V	77 nC	95 ns	40 A	10 Ohm 15 V 20 A 300 V	-55 °C	150 °C
ON Semiconductor FGA40N60UFDTU	160 W	15 ns 65 ns	SC-65-3 TO-3P-3	TO-3P	600 V	130 µJ 470 µJ	Through Hole	3 V	77 nC	95 ns	40 A	10 Ohm 15 V 20 A 300 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 40 A 160 W Through Hole TO-3P

Technical documentation and resources