Discrete Semiconductor Products

FDS4895C

Obsolete

MOSFET N/P-CH 40V 5.5A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 40V 5.5A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	FDS4895C

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.4 A, 5.5 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	900 mW
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS4895C	4.4 A 5.5 A	900 mW	10 nC	MOSFET (Metal Oxide)	39 mOhm	410 pF	8-SOIC	Surface Mount	N and P-Channel	40 V	-55 °C	150 °C	5 V	8-SOIC	3.9 mm	0.154 in
ON Semiconductor FDS4895C	4.4 A 5.5 A	900 mW	10 nC	MOSFET (Metal Oxide)	39 mOhm	410 pF	8-SOIC	Surface Mount	N and P-Channel	40 V	-55 °C	150 °C	5 V	8-SOIC	3.9 mm	0.154 in

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General part information

Mosfet Array 40V 5.5A, 4.4A 900mW Surface Mount 8-SOIC

Technical documentation and resources