Discrete Semiconductor Products
YQ30NL10SEFHTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 30A, TO-263L, HIGHLY EFFICIENT SBD FOR AUTOMOTIVE
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Discrete Semiconductor Products
YQ30NL10SEFHTL
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 30A, TO-263L, HIGHLY EFFICIENT SBD FOR AUTOMOTIVE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ30NL10SEFHTL |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-263L |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 860 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
YQ30NL10SEFH Series
The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Documents
Technical documentation and resources