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R6035VNXC7G

Discrete Semiconductor Products

R6035VNXC7G

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Rohm Semiconductor

600V 17A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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Search across all available documentation for this part.

DocumentsBasics of Thermal Resistance and Heat Dissipation Notes for Temperature Measurement Using Forward Voltage of PN Junction +41

R6035VNXC7G

Discrete Semiconductor Products

R6035VNXC7G

Active

Rohm Semiconductor

600V 17A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Deep-Dive with AI

DocumentsBasics of Thermal Resistance and Heat Dissipation Notes for Temperature Measurement Using Forward Voltage of PN Junction +41

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6035VNXC7G

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	81 W
Rds On (Max) @ Id, Vgs	114 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	720	$ 2.77
Mouser	N/A	1	$ 2.62
		50	$ 2.55
Newark	Each	1	$ 3.35
		10	$ 3.10
		25	$ 2.89
		50	$ 2.77

Description

General part information

R6035VNX Series

R6035VNX is Generation 4th PrestoMOS™ Fast Recovery Diode SJMOS, suitable for the switching applications.

Documents

Technical documentation and resources

Basics of Thermal Resistance and Heat Dissipation

Notes for Temperature Measurement Using Forward Voltage of PN Junction

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Types and Features of Transistors

Application Note

Reduction in Switching Loss of Phase-Shift Full-Bridge Converter using PrestoMOS™ R60xxVNx series

Schematic Design & Verification

Inner Structure

Package Information

R6035VNX Data Sheet

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

Notes for Calculating Power Consumption:Static Operation

About Export Regulations

Export Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Anti-Whisker formation - Transistors

Package Information

Judgment Criteria of Thermal Evaluation

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Explanation for Marking

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

R6035VNX ESD Data

Characteristics Data

Two-Resistor Model for Thermal Simulation

Precautions When Measuring the Rear of the Package with a Thermocouple

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Package Dimensions

Package Information

What is a Thermal Model? (Transistor)

List of Transistor Package Thermal Resistance

Measurement Method and Usage of Thermal Resistance RthJC

How to Use LTspice® Models

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Part Explanation

Application Note

How to Use the Thermal Resistance and Thermal Characteristics Parameters

What Is Thermal Design

Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge

Technical Article

Reliability Test Result

Manufacturing Data

PCB Layout Thermal Design Guide

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

R6035VNX Series

600V 17A TO-220FM, PrestoMOS™ with integrated high-speed diode

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case
Rohm Semiconductor R6035VNXC7G	Through Hole	50 nC	N-Channel	30 V	10 V 15 V	150 °C	2400 pF	600 V	MOSFET (Metal Oxide)	114 mOhm	17 A	TO-220FM	6.5 V	81 W	TO-220-3 Full Pack