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8-PQFN
Discrete Semiconductor Products

FDMT800150DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 88 POWERTRENCH<SUP>®</SUP> MOSFET 150V, 99A, 6.5MΩ

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8-PQFN
Discrete Semiconductor Products

FDMT800150DC

Active
ON Semiconductor

N-CHANNEL DUAL COOL<SUP>TM</SUP> 88 POWERTRENCH<SUP>®</SUP> MOSFET 150V, 99A, 6.5MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMT800150DC
Current - Continuous Drain (Id) @ 25°C15 A, 99 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs108 nC
Input Capacitance (Ciss) (Max) @ Vds8205 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)3.2 W, 156 W
Rds On (Max) @ Id, Vgs6.5 mOhm
Supplier Device Package8-Dual Cool™88
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.07
10$ 4.14
100$ 3.76
Digi-Reel® 1$ 6.07
10$ 4.14
100$ 3.76
Tape & Reel (TR) 3000$ 3.76
NewarkEach (Supplied on Full Reel) 3000$ 4.52
6000$ 4.22
12000$ 3.92
18000$ 3.77
30000$ 3.71
ON SemiconductorN/A 1$ 3.46

Description

General part information

FDMT800150DC Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.