Discrete Semiconductor Products

MA2C16500E

Obsolete

DIODE GEN PURP 35V 100MA DO34-A1

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 35V 100MA DO34-A1

Technical Specifications

Parameters and characteristics for this part

Specification	MA2C16500E

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction	200 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	10 ns
Speed	Any Speed
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	35 V

Part	Speed	Speed	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]
Panasonic Industrial Automation Sales MA2C16500E	Any Speed	200 mA	10 ns	100 mA	2 pF	Through Hole	200 °C	100 nA	Standard	Axial DO-204AG DO-34	35 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 35 V 100mA Through Hole DO34-A1

Technical documentation and resources