IRFI740BTU

Obsolete

MOSFET N-CH 400V 10A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 400V 10A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFI740BTU

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	3.13 W, 134 W
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case
ON Semiconductor IRFI740BTU	30 V	N-Channel	10 V	4 V	3.13 W 134 W	I2PAK	-55 °C	150 °C	400 V	1800 pF	MOSFET (Metal Oxide)	Through Hole	10 A	53 nC	I2PAK TO-262-3 Long Leads TO-262AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 400 V 10A (Tc) 3.13W (Ta), 134W (Tc) Through Hole I2PAK

Technical documentation and resources

No documents available