Specification	FDT459N

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FDT459N Series

N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FDT459N	2 V	N-Channel	4.5 V 10 V	30 V	17 nC	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	365 pF	Surface Mount	20 V	SOT-223-4	6.5 A	3 W	-55 °C	150 °C	35 mOhm
ON Semiconductor FDT459N	2 V	N-Channel	4.5 V 10 V	30 V	17 nC	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	365 pF	Surface Mount	20 V	SOT-223-4	6.5 A	3 W	-55 °C	150 °C	35 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	634	$ 0.47
		634	$ 0.47
LCSC	Piece	1	$ 0.49
		200	$ 0.19
		500	$ 0.18
		1000	$ 0.18

Description

General part information

FDT459N Series

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.